sot223 p-channel enhancement mode vertical dmos fet issue 2 ? march 94 j features * 100 volt v ds *r ds(on) =8 w complementary type ? zvn2110g partmarking detail ? zvp2110 absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -100 v continuous drain current at t amb =25c i d -310 ma pulsed drain current i dm -3 a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss -100 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -1.5 -3.5 v id=-1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss -1 -100 m a m a v ds =-100 v, v gs =0 v ds =-80 v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) -750 ma v ds =-25 v, v gs =-10v static drain-source on-state resistance (1) r ds(on) 8 w v gs =-10v,i d =-375ma forward transconductance (1)(2) g fs 125 ms v ds =-25v,i d =-375ma input capacitance (2) c iss 100 pf common source output capacitance (2) c oss 35 pf v ds =-25v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 10 pf turn-on delay time (2)(3) t d(on) 7ns v dd ? -25v, i d =-375ma rise time (2)(3) t r 15 ns turn-off delay time (2)(3) t d(off) 12 ns fall time (2)(3) t f 15 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. 3 - 429 3 - 430 ZVP2110G ZVP2110G 0 0.5 1.0 1.5 q-gate charge (nc) 40 20 0 60 0-20-40-60 v ds -drain source voltage (volts) capacitance v drain-source voltage c -c apaci ta nce ( pf) c iss c oss c rss v g s - g ate s ource v ol tag e ( v ol ts) gate charge v gate-source voltage -6 -8 -10 -14 -16 -12 -4 -2 0 v ds = -25v i d=- 0.5a -50v -100v 80 -80 -100 2.0 2.5 3.0 typical characteristics normalised r ds(on) and v gs(th) vs temperature n or m al i sed r and v -40 -20 0 20 40 60 80 120 100 140 160 i d= -0.375a 0-2 -4-6-8-10 saturation characteristics on-resistance v drain current i d- drain current (ma) r -drain source on resistance w -5v -7v -16v -9v v gs= -10v i d= -1ma v gs= v ds 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 2.6 180 10 1 100 10 100 1000 v gs =-4v -10v -20v -6v -7v -8v -10v -5v -4.5v -12v v gs = i - dr ai n curr ent (a m ps) v ds - drain source vol t age ( vol ts) -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.2 0 -0.4 -20v -4v -3.5v junction temperature (c) transconductance v gate-source voltage v gs -gate source voltage (volts) g f s - t r an sconductance ( m s) 0-2 -4-6-8-10 200 150 100 0 50 250 v ds= -10v d d s g
sot223 p-channel enhancement mode vertical dmos fet issue 2 ? march 94 j features * 100 volt v ds *r ds(on) =8 w complementary type ? zvn2110g partmarking detail ? zvp2110 absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -100 v continuous drain current at t amb =25c i d -310 ma pulsed drain current i dm -3 a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss -100 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -1.5 -3.5 v id=-1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss -1 -100 m a m a v ds =-100 v, v gs =0 v ds =-80 v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) -750 ma v ds =-25 v, v gs =-10v static drain-source on-state resistance (1) r ds(on) 8 w v gs =-10v,i d =-375ma forward transconductance (1)(2) g fs 125 ms v ds =-25v,i d =-375ma input capacitance (2) c iss 100 pf common source output capacitance (2) c oss 35 pf v ds =-25v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 10 pf turn-on delay time (2)(3) t d(on) 7ns v dd ? -25v, i d =-375ma rise time (2)(3) t r 15 ns turn-off delay time (2)(3) t d(off) 12 ns fall time (2)(3) t f 15 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. 3 - 429 3 - 430 ZVP2110G ZVP2110G 0 0.5 1.0 1.5 q-gate charge (nc) 40 20 0 60 0-20-40-60 v ds -drain source voltage (volts) capacitance v drain-source voltage c -c apaci ta nce ( pf) c iss c oss c rss v g s - g ate s ource v ol tag e ( v ol ts) gate charge v gate-source voltage -6 -8 -10 -14 -16 -12 -4 -2 0 v ds = -25v i d=- 0.5a -50v -100v 80 -80 -100 2.0 2.5 3.0 typical characteristics normalised r ds(on) and v gs(th) vs temperature n or m al i sed r and v -40 -20 0 20 40 60 80 120 100 140 160 i d= -0.375a 0-2 -4-6-8-10 saturation characteristics on-resistance v drain current i d- drain current (ma) r -drain source on resistance w -5v -7v -16v -9v v gs= -10v i d= -1ma v gs= v ds 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 2.6 180 10 1 100 10 100 1000 v gs =-4v -10v -20v -6v -7v -8v -10v -5v -4.5v -12v v gs = i - dr ai n curr ent (a m ps) v ds - drain source vol t age ( vol ts) -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.2 0 -0.4 -20v -4v -3.5v junction temperature (c) transconductance v gate-source voltage v gs -gate source voltage (volts) g f s - t r an sconductance ( m s) 0-2 -4-6-8-10 200 150 100 0 50 250 v ds= -10v d d s g
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